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期刊名称:ADVANCED ELECTRONIC MATERIALS

ISSN:2199-160X
出版频率:Monthly
出版社:WILEY, 111 RIVER ST, HOBOKEN, USA, NJ, 07030-5774
  出版社网址:http://onlinelibrary.wiley.com/
期刊网址:http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2199-160X
影响因子:7.295
主题范畴:NANOSCIENCE & NANOTECHNOLOGY;    MATERIALS SCIENCE, MULTIDISCIPLINARY;    PHYSICS, APPLIED
变更情况:Newly Added by 2015

期刊简介(About the journal)    投稿须知(Instructions to Authors)    编辑部信息(Editorial Board)   



About the journal

Cover image for Vol. 1 Issue 12

Overview

Aims and Scope


Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.

ISSN: 2199-160X (online). CODEN: AEMDBW.

Volume 2. 12 Issues in 2016.

How to cite: To make sure that references to this journal are correctly recorded and resolved (for example in CrossRef, PubMed, or ISI Web of Knowledge), please use the following abbreviated title in any citations: "Adv. Electron. Mater." (punctuation may vary according to the style of the citing journal).


Readership


Scientists and engineers from all disciplines, including biologists, chemists, physicists, materials scientists, and environmental scientists.
Abstracting and Indexing Information

  • CAS: Chemical Abstracts Service (ACS)

Instructions to Authors

Author Resources

So that we can minimize publication times, we ask authors to take special care with the formal details of the manuscripts (see documents provided). Issues of the current year should be consulted. Also see the online sample copy

.

Additional Resources


Instructions to Authors
2707_Guide_for_Authors.pdf

Editorial Board
Executive Advisory Board: us Sang-Woo Kim, Sungkyunkwan University, Korea
Stuart Parkin, MPI Halle, Germany
Xiaohui Qiu, National Center for Nanoscience and Technology, China
John Rogers, University of Illinois at Urbana-Champaign, USA
Henning Sirringhaus, University of Cambridge, UK
Takao Someya, University of Tokyo, Japan
Rainer Waser, RWTH Aachen University, Germany
International Advisory Board: Jong Hyun Ahn, Yonsei University, Korea
Marin Alexe, University of Warwick, UK
Hiroshi Amano, Nagoya University, Japan
Phaedon Avouris, IBM, USA
David Barbero, Umea University, Sweden
Zhenan Bao, Stanford University, USA
Mark Blamire, University of Cambridge, UK
Paul Blom, University of Mainz, Germany
Karl Böhringer, University of Washington, USA
Lapo Bogani, Oxford University, UK
Ivan Bozovic, Brookhaven National Laboratory, USA
Alexander Balandin, University Of California Riverside, USA
David Cahill, University of Illinois at Urbana-Champaign, USA
Guozhong Cao, University of Washington, USA
Hui-Ming Cheng, Shenyang National Laboratory, China
Kilwon Cho, Pohang University of Science and Technology, Korea
Eugenio Coronado, Universitat de València, Spain
Xiangfeng Duan, University of California Los Angeles, USA
Bruce Dunn, University of California Los Angeles, USA
Josep Fontcuberta, Institute of Materials Science of Barcelona, Spain
Gregory Fuchs, Cornell University, USA
Yuri Gogotsi, Drexel University, USA
Marius Grundmann, University of Leipzig, Germany
Hideo Hosono, Tokyo Institute of Technology, Japan
Wenping Hu, Institute of Chemistry, Chinese Academy of Science, China
Wei Huang, Nanjing University of Technology, China
Cheol-Seong Hwang, Seoul National University, Korea
Nazir Kherani, University of Toronto, Canada
Jang-Joo Kim, Seoul National University, Korea
Hagen Klauk, Max Plank Institute for Solid State Research, Stuttgart, Germany
Holger Kleinke, University of Waterloo, Canada
Valeri Kotov, University of Vermont, USA
Yoshihiro Kubozono, Okayama University, Japan
Takhee Lee, Seoul National University, Korea
Qingwen Li, Suzhou Institute of Nanoscience and Nanobionics, China
Yongfang Li, Institute of Chemistry, Chinese Academy of Science, China
Emil List-Kratochvil, Humboldt-Universität zu Berlin
Ming Liu, Institute of Microelectronics, Chinese Academy of Science, China
Maria Antonietta Loi, University of Groningen, The Netherlands
Xiong Wen Lou, Nanyang Technological University, Singapore
Cristine Luscombe, University of Washington, USA
Liqiang Mai, Wuhan University of Technology, China
Rodrigo Martins, Universidade Nova de Lisboa, Portugal
Richard McCullough, Harvard University, USA
Martyn McLachlan, Imperial College London, UK
Neil Mathur, University of Cambridge, UK
Andy Monkman, Durham University, UK
Hadis Morkoc, Virginia Commonwealth University, USA
Yoshio Nishi, Stanford University, USA
Tae Won Noh, Seoul National University, Korea
Qibing Pei, University of California Los Angeles, USA
Clive Randall, Pennsylvania State University, USA
Alberto Salleo, Stanford University, USA
James Scott, University of Cambridge, UK
Jan Seidel, University of New South Wales, Australia
Jeffrey Snyder, California Institute of Technology, USA
Susanne Stemmer, University of California Santa Barbara, USA
Michael Strano, Massachusetts Institute of Technology, USA
Osamu Tabata, Kyoto University, Japan
He Tian, East China University of Science and Technology, China
Joseph Wang, University of California San Diego, USA
Christian Wetzel, Rensselaer Polytechnic Institute, USA
Peter Woias, University of Freiburg, Germany
H.-S. Philip Wong, Stanford University, USA
Matthias Wuttig, RWTH Aachen University, Germany
Gary Fedder, Carnegie Mellon University, USA
Ulrike Wallrabe, University of Freiburg, Germany
Xudong Wang, University of Wisconsin-Madison, USA


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