期刊名称:SPIN

ISSN:2010-3247
出版频率:Quarterly
出版社:WORLD SCIENTIFIC PUBL CO PTE LTD, 5 TOH TUCK LINK, SINGAPORE, SINGAPORE, 596224
  出版社网址:http://www.worldscientific.com/
期刊网址:http://www.worldscientific.com/loi/spin
影响因子:1.439
主题范畴:PHYSICS, APPLIED
变更情况:

期刊简介(About the journal)    投稿须知(Instructions to Authors)    编辑部信息(Editorial Board)   



About the journal

SPIN: Vol. 06, No. 03

Print ISSN: 2010-3247
Online ISSN: 2010-3255
Spin electronics is a rapidly emerging field which is based on taking advantage of the unique properties of the spin of the electron, the nucleus and other fundamental particles, as well as that of the photon. Spin electronics has special importance as conventional electronics reaches its physical limitations.

Novel sensing, memory and logic devices, which rely on generating, manipulating and detecting the electron's spin, as well as using currents of spin-polarized electrons to manipulate magnetization in the form of magnetic nanoelements and magnetic domain walls, have emerged in recent years.

Spin electronic devices in the form of highly sensitive read sensors for magnetic recording have been a key component of high capacity magnetic disk drives for more than a decade: they enabled a vast increase in the storage capacity of disk drives by several orders of magnitude and are key to today's information age.

Solid state memory devices such as Magnetic Random Access Memory (MRAM) have recently entered the market. Other exciting possibilities relate to very dense and high performance memory-storage devices such as Racetrack Memory, as well as low power magnetic logic, and applications of spintronic sensing devices such as diagnostic biomagnetic lab-on-a-chip devices. Many of these applications require the integration of magnetic and semiconducting materials and a fundamental understanding of both magnetic and semiconductor physics and technology: this is especially important if spin electronics is to become the electronics of the future.

Spin electronics encompasses a multidisciplinary research effort involving magnetism, semiconductor electronics, materials science, chemistry and biology. SPIN aims to provide a forum for the presentation of research and review articles of interest to all researchers in the field.

The scope of the journal includes (but is not necessarily limited to) the following topics:

  • Materials
    • Metals
    • Heusler compounds
    • Complex oxides: antiferromagnetic, ferromagnetic
    • Dilute magnetic semiconductors
    • Dilute magnetic oxides
    • High performance and emerging magnetic materials
  • Semiconductor electronics
  • Nanodevices
    • Fabrication
    • Characterization
  • Spin injection
  • Spin transport
  • Spin transfer torque
  • Spin torque oscillators
  • Electrical control of magnetic properties
  • Organic spintronics
  • Optical phenomena and optoelectronic spin manipulation
  • Applications and devices
    • Novel memories and logic devices
    • Lab-on-a-chip
    • Others
  • Fundamental and interdisciplinary studies
    • Spin in low dimensional system
    • Spin in medical sciences
    • Spin in other fields
    • Computational materials discovery
Abstracted & Indexed in

Instructions to Authors
Submission Guidelines
  1. Manuscripts are to be submitted online via Editorial Manager (EM), a fully web-based submission, peer-review, and tracking system. Manuscript submitted by email to spin@wspc.com will be accepted only when there are problems in the online submission system.
  2. New Authors: If you are submitting via the online system for the first time, you will first be required to register. From the account you create, you will be able to monitor your submission and make subsequent submissions.
  3. Manuscripts are to be prepared according to the instructions provided. They should preferably be prepared using a TEX style file or MS Word file. Authors are allowed to check their proofs before publication. Free TEX program is available at http://www.tug.org/interest.html#free.
  4. Figures/illustrations are preferably to be prepared with at least 3.5 inches in width, and the text in the figures should be typeset in at least 9 pt Times Roman. The figures are preferably to be in Encapsulated PostScript (EPS) with a resolution of at least 300 dpi.
  5. Authors are requested to recommend three reviewers for their manuscripts and explain why their manuscripts are to be published in the journal (strong points, etc.).
  6. Once a paper is accepted, authors are assumed to cede copyrights of the paper over to World Scientific Publishing Co. Pte. Ltd.
  7. All papers will be acknowledged and refereed. They will not be returned.
  8. Submission of a manuscript indicates a tacit understanding that the paper is not actively under consideration for publication with other journals.
  9. There is no page charge for the journal.
  10. Authors will be provided with the free softcopy of the final paper in pdf.

Detailed instructions for preparation of manuscripts are available in:



Editorial Board
Chief Editor
Stuart Parkin
IBM, Almaden, USA

Managing Editors
Ching-Ray Chang (National Taiwan University)
Roy Chantrell (The University of York, UK)

Consulting Editors
H. Ohno (Tohoku University, Japan)
Kang L. Wang (University of California, Los Angeles, USA)
Shoucheng Zhang (Stanford University, USA)

Editorial Board Members
Jingsheng Chen (National University of Singapore)
Mourad Cherif (Université Paris 13, France)
J. M. D. Coey (Trinity College Dublin, Ireland)
Claudia Felser (Max-Planck-Institut für Chemische Physik fester Stoffe, Germany)
Paulo Freitas (INESC MN, Portugal)
Alexander B. Granovsky (Moscow State University, Russia)
Xiufeng Han (Chinese Academy of Sciences, China)
Atsufumi Hirohata (The University of York, UK)
Yiming Huai (Avalanche Technology, USA)
Sang-Koog Kim (Seoul National University, Korea)
Bert Koopmans (Eindhoven University of Technology, The Netherlands)
Yaowen Liu (Tongji University, China)
Christopher Marrows (University of Leeds, UK)
Hiro Munekata (Tokyo Institute of Technology, Japan)
Branislav Nikolic (University of Delaware, USA)
Shun-Qing Shen (The University of Hong Kong)
Jing Shi (University of California, Riverside, USA)
Kyung-Ho Shin (KIST, Korea)
Koki Takanashi (Tohoku University, Japan)
Shoogo Ueno (Kyushu University, Japan)
Zung-Hang Wei (National Tsing Hua University, Taiwan)
Jong-Ching Wu (National Changhua University of Education, Taiwan)
Xiaohong Xu (Shanxi Normal University, China)
Mi Yan (Zhejiang University, China)

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