期刊名称：REVIEWS ON ADVANCED MATERIALS SCIENCE
 期刊简介(About the journal)
投稿须知(Instructions to Authors)
编辑部信息(Editorial Board)
About the journal
The journal "Reviews on Advanced Materials Science" provides an international medium for the publication of reviews, topical issues and international conference proceedings in the area of theoretical and experimental studies of advanced materials. Focuses are placed on, but not limited to nanostructured materials, semiconductors and high-transition-temperature superconductors. We encourage prospective authors to correspond with the principal editor before submitting an article. Proposals should include an outline with key citations. All papers submitted will be rigorously peer-reviewed prior to publication.
Instructions to Authors
A Submission of papers:
Manuscript should be submitted in English in both electronic (by e-mail) and hard copy (original +copy) versions.
Hard copy submission: Manuscripts should be submitted typed on good quality bond paper of A4 format with 1" margins (right, left, top, bottom), double-spaced, using Times Roman 12 pt font, to:
Reviews on Advanced Materials Science
Editorial Office
Institute of Problems of Mechanical Engineering
Russian Academy of Sciences
Bolshoj 61, Vas.Ostrov, St.Petersburg, 199178, Russia
Fax: +(7 812)321 4771
Electronic submission: Manuscripts should be submitted by e-mail to
E-mail: rams@rams.ipme.ru
Filetypes: LaTeX2e with aipproc.cls, aipproc.sty (you can find instructions here) or MS Word files according to instructions bellow.
Pictures and photos should be submitted in TIFF format (400 dpi).
B Length:
Papers should be limited to 200 typewritten pages (including Tables and Figures each on separate page)
C Structure of the manuscript:
- Cover sheet
- Text
- Tables
- References
- Figure Captions
- Pictures and Photos
D A cover sheet should be included that contains the complete title, the names, affiliations, mailing addresses of the authors, fax and e-mail address of the corresponding author and the abstract.
TITLE √ bold, centered. (14 pt)
Author(s) √ centered, e.g. S. R. Brown and T. Klein
Affiliation(s) √ centered, complete postal address for all authors, e-mail address
of corresponding author.
ABSTRACT
About 150-200 words.
E Tables: type each table on the separate page, number consecutively in arabic numerals and supply a heading.
F References:
References should be indicated in the text by consecutive numbers in square parentheses, e.g. [1,2,5-7], as a part of the text, the full reference being cited at the end of the text. References should contain the names of the authors together with their initials, the title of the journal, volume number, year and the first page number as illustrated below. References to books should contain the names of the authors, the title (the names of editors), the publisher name, location and year, as illustrated below.
REFERENCES
[1] R. Birringer, H. Gleiter, H.P. Klein and P. Marquardt // Phys. Lett. 102 (1984) 365.
[2] F.R. Nabarro, Theory of Crystal Dislocations (Clarendon Press, Oxford, 1967).
[3] V. Provenzano, In: Nanostructured Materials: Science and Technology, edited by G.-M. Chow and N.I Noskova (Kluwer: Dordrecht, 1998), p. 335.
G Figures: for best results submit illustrations in the actual size at which they should be published. The line drawings of the original should be laser printed, the photographs should be original, with somewhat more contrast than is required in the printed version. Each figure should be typed on separate page, the listing of the figure captions must be included.
H Equations must be clearly printed and numbered sequentially with arabic numbers enclosed with round parentheses at the right-hand margin.
I Units √ the authors are encouraged to use the SI-units, other units are also acceptable.
Editorial Board
International Editorial Board:
| E.C. Aifantis |
Aristotle University of Thessaloniki, Greece |
| G.Balasubramanian |
Analytical Services & Materials, Inc., USA |
| M.-I. Baraton
| CNRS, Limoges, France |
| K. Chong |
National Science Foundation, USA |
| G.-M.Chow
| National University of Singapore, Singapore
|
| Y.Gogotsi
| Drexel University, USA |
| D. Hui
| University of New Orleans, USA |
| P.Jena
| Virginia Commonwealth University, USA
|
| L.Kabacoff
| Office of Naval Research, USA
|
| D.M. Klimov
| Institute of Problems of Mechanics (RAS), Russia
|
| V.G. Konakov
| St.Petersburg State University, Russia
|
| T.G. Langdon
| University of Southern California, USA
|
| E.J.Lavernia
| University of California, Irvine, USA
|
| J. Lu |
University of Technology of Troyes, France |
| C.S.Pande
| Naval Research Laboratory, USA
|
| H.-E.Schaefer
| Stuttgart University, Germany
|
| S. Seal
| University of Central Florida, USA
|
| R.D.Shull
| National Institute of Standards and Technology, USA
|
| B.I.Smirnov
| Ioffe Physico-Technical Institute (RAS), Russia
|
| M.Soto
| Office of Naval Research, USA
|
| S.K.Sundaram
| Pacific Northwest National Laboratory, USA
|
| R.A.Suris
| Ioffe Physico-Technical Institute (RAS), Russia
|
| A.Thölén
| Chalmers University of Technology, Sweden
|
| Y.F.Titovets
| St.Petersburg State Technical University, Russia
|
| T.Tsakalakos
| Rutgers University, USA
|
| T. Weber |
National Science Foundation, USA |
| D.Wolf
| Argonne National Laboratory, USA |
|
