期刊名称：JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS ISSN： 1555-130X 出版频率： Monthly 出版社： AMER SCIENTIFIC PUBLISHERS, 26650 THE OLD RD, STE 208, VALENCIA, USA, CA, 91381-0751   出版社网址： http://www.aspbs.com/ 期刊网址： http://www.aspbs.com/jno.htm 影响因子： 0.961 主题范畴： ENGINEERING, ELECTRICAL & ELECTRONIC;    NANOSCIENCE & NANOTECHNOLOGY;    PHYSICS, APPLIED 期刊简介(About the journal)    投稿须知(Instructions to Authors)    编辑部信息(Editorial Board)    About the journal Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics. JNO publishes (i) original full research papers (ii) rapid communications of important new scientific and technological findings and (iii) timely state-of-the-art reviews (with author’s photo and biography) encompassing the fundamental and applied research in all aspects of the science and engineering of electronic, optoelectronic and photonic materials and devices. JNO covers the following broadly defined research areas; 1.Electronic and optical properties of semiconductor, inorganic, organic, and hybrid nanostructures 2.Electronic applications of superlattices, quantum structures, and other nanostructures 3.Optoelectronic and photonic applications of novel materials and nanostructures 4.Nanoelectronic circuits and device integration 5.Nanofabrication, processing and characterization techniques 6.Information processing and optical communications RESEARCH TOPICS COVERED (but not limited to)   Journal of Nanoelectronics and Optoelectronics (JNO) publishes high quality experimental, theoretical and modeling research articles, rapid communications, and state-of-the-art reviews. Examples of specific topics to be covered include electronic and luminescent nanostructured materials, magneto-optical and nonlinear optical materials, solar energy materials, conducting polymers, fiber optics, liquid crystals, growth and processing of inorganic, organic and hybrid materials, thin film processing, molecular beam epitaxy, lithography, semiconductor hetero- and nanostructures, assembly and characterization of nanostructures for electronic and optoelectronic applications, quantum cryptography and information processing, molecular electronics, thermal management of optoelectronic devices, packaging, sensors, lasers and light-emitting diodes, imaging and display devices, integration of optical components, detectors, cameras, filters, memory and data storage, sol-gel and porous materials, composites and blends, biomedical applications. JNO will publish articles pertinent to all aspects of nanoelectronics and optoelectronics research including all types of materials their synthesis, processing, fabrication, spectroscopic characterization, properties, and devices applications covered under these categories. SYNTHESIS: chemical and electrochemical syntheses of nanoscale semiconductors, insulators, inorganics, organics, organic-inorganic hybrid materials; sol-gel and porous materials; polymers, composites and blends; supra-molecular materials; alloys, intermetallics, ceramics, glasses, fullerenes, clusters, crystals, particles, capsules, fibers, nanotubes, molecular wires, quantum dots, quantum wells, superlattices, dentrimers, microstructures, bio-and biomimetic materials, colloids, photonic crystals, particle arrays, hydrothermal synthesis mechanochemical synthesis; modeling of deposition and other synthesis methods. PROCESSING: purification and processing of inorganic, organic, semiconductor, metal, ceramics, hybrid materials; thin film processing and deposition; molecular beam epitaxy, chemical vapor deposition, epitaxy, self-assemblies, rapid prototyping, pulsed laser deposition, sol-gel processing, plasma processing, surface modification, electroplating, laminating, coating, adhesion, crystal growth, electrochemical deposition, etching, annealing, lithography, and atomic manipulation. CHARACTERIZATION: materials characterization using Visible-UV PL, FTIR, Raman, STM, AFM, XPS, ESR, AES, X-ray, neutron scattering, surface electron diffraction, LEED and RHEED; structure analysis at atomic, molecular, nano and micrometer scales; electronic and phonon band structure; current-voltage, capacitance-voltage and thermal electron device characterization; optoelectronic device characterization. PROPERTIES: Electrical, optical, optoelectronic, magnetic, chemical, thermal, mechanical and other physical properties; luminescence, dielectric and ferroelectric properties, photoconductivity; optics and nonlinear optics, photoinduced phenomena, liquid crystalline behaviors, crystallography, surface and interface properties, ultra-fast dynamics, modeling of electrical and optical properties of materials. DEVICE APPLICATIONS: semiconductor devices, nanoelectronic devices and circuits; optoelectronic and photonic devices; microelectronics and optoelectronics packaging; luminescent and display devices, light-emitting diodes, thin film transistors, fiber optics, lasers, optical beam steering, holography, optical components, detectors, cameras, sensors, filters, photovoltaic devices, memory devices and data storage, magneto-optical recording devices, liquid crystal displays, biomedical optic devices. Readership   Scientists, engineers, and professionals from academia, industries and governmental laboratories working in the fields of fields of nanotechnology, nanoelectronics, optoelectronics, nano-optics, semiconductor technology, electrical and electronic engineering, optical science and engineering, solid-state physics, materials science, surface science, manufacturing, device applications, telecommunications, data storage, information technology, computer science and engineering Editor-in-Chief Professor Alexander A. Balandin Department of Electrical Engineering University of California Riverside, California 92521-0425, USA Tel.: (951) 827-2351 Fax: (951) 827-2425 Email: alexb@ee.ucr.edu Book for Review Publications should be sent the Editorial Office. Subscription American Scientific Publishers 25650 North Lewis Way Stevenson Ranch, California 91381-1439, USA Tel. (661) 799-7200 Fax: (661) 799-7230 Email: order@aspbs.com Referee's Report Please prepare and submit Reviewer's Report on the Journal of Nanoelectronics and Optoelectronics homepage. Annual Subscription Rates (Print Edition) for 2006 Personal: US$ 200 (Domestic) / US$250 (Foreign Countries) Institutional: US$ 575 (Domestic) / US$ 595 (Foreign Countries) Postage and handling included (For airmail service outside USA, please add $50) Web Edition Journal of Nanoelectronics and Optoelectronics will be available via internet. For subscription rates to Web Edition, please contact publisher. American Scientific Publishers 26650 The Old Road, Suite 208 Valencia, California 91381-0751, USA Tel. (661) 799-7200 Fax: (661) 799-7230 Email: order@aspbs.com Instructions to Authors Journal of Nanoelectronics and Optoelectronics ( (JNO)is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source.JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics. JNOpublishes (i) original full research papers (ii) rapid communications of important new scientific and technological findings and (iii) timely state-of-the-art reviews (with author’s photo and biography) encompassing the fundamental and applied research in all aspects of the science and engineering of electronic, optoelectronic and photonic materials and devices. JNO covers the following broadly defined research areas: Electronic and optical properties of semiconductor, inorganic, organic, and hybrid nanostructures Electronic applications of superlattices, quantum structures, and other nanostructures Optoelectronic and photonic applications of novel materials and nanostructures Nanoelectronic circuits and device integration Nanofabrication, processing and characterization techniques Information processing and optical communications. JOURNAL POLICY: It is journal policy to publish only original and unpublished research work therefore Journal of Nanoelectronics and Optoelectronics does not wish to receive any papers on research work that has already been reported in parts or contains already published text, data, figures, tables or other illustrations or any copyright materials whatsoever that has been submitted or accepted for publication either in a journal or conference proceedings elsewhere in any form, in print or in electronic media. When submitting a manuscript, authors should make a full statement to the Editor-in-Chief or Editors that the research work contained in their manuscript is completely original and unpublished. If redundant or duplicate publication is attempted or occurs authors should expect immediate editorial action to be taken including prompt rejection of the submitted manuscript. Submission of any manuscript that contains redundant or duplicate publication of the same or very similar research work violates the policies of this journal. SSUBMISSION OF MANUSCRIPT: Authors are kindly advised to read Journal of Nanoelectronics and Optoelectronics policy and also the uniform requirements for manuscripts submission. Authors are encouraged to submit high quality original research work that has not been published or nor under consideration by other journals or conference proceedings elsewhere. Authors should submit manuscript electronically either as a PDF or Microsoft Word file to theEditor-in-Chief, Authors are highly encouraged to submit manuscript electronically to save time for the reviewing process. EDITOR-IN-CHIEF Professor Alexander A. Balandin Department of Electrical Engineering Riverside, California 92521-0425, USA Phone: (951) 827-2351 Fax: (951) 827-2425 Email: alexb@ee.ucr.edu Authors should submit a List of FIVE (5) potential referees accompanied with their complete mailing address, telephone, fax and email address, who may be contacted for reviewing the manuscript though refereeing, is done by anonymous reviewers. In order to ensure that the highest quality manuscripts are published, reviewing process is carried out in two stages. A mandatory editor's approval is required in the first stage for the manuscripts before it is submitted to the peer review process in the second stage. COMMUNICATIONS: Highest priority will be given to the communications reporting important new scientific and technological findings. Rapid publication is provided for concise and up-to-date reports. These articles should not exceed three-four published pages. No section headings should be used for these short communications. RESEARCH ARTICLES: Full length papers that report original research work in the fields of low power electronics. REVIEWS: The state-of-the-art review articles with author's short biography and photo will be published. Reviews are limited to a maximum length of 30 journal pages. It is authorsâ€?responsibility to obtain written copyright permissions to reproduce any copyright materials from other sources. Authors are advised to cite proper references in figure/tables captions of all previously published figures/tables/illustrations including their own published work and obtain copyright permissions from appropriate publishers and authors. TYPING: All manuscripts must be in English, typed double-spaced on one side of the page throughout (including footnotes, references, tables, legends) on 8.5" x 11" or A4 white paper leaving at least 1 inch left hand margin. INTRODUCTORY MATERIAL: The first page of the manuscript should have a concise title limited to about 15 words and the names of all authors, complete mailing address for correspondence, telephone, fax numbers and email address. Please indicate with an asterisk (*) the author to whom correspondence regarding the manuscript should be directed. ABSTRACT: All manuscripts must contain an informative 100 to 250 words abstract explaining the essential contents of the work, key ideas and results. A list of 3-6 "Key Words" should be included with the abstract. FIGURES: It is very important to supply high quality figures in a form suitable for reproduction. All figures, tables, illustrations, photographs should be prepared in such a way that they could be printed in a single column size with a width of 3 1/4 inches or 8.25 cm. Only if absolutely necessary should figures/tables/photos occupy double columns. Each figure must be referred to in the text and will be printed in black and white unless otherwise instructed by the authors. Each Figure should be submitted on a separate sheet and marked with the name of the author, title of manuscript and figure number. All formulae and figures should be carefully drafted and never drawn freehand. Use same font and size for all figure legends. High quality original figures and glossy prints of all photographs are required. Photocopies of the figures and photographs are not acceptable. EQUATIONS: All equations should be numbered consecutively, with the equation number written in parentheses on the right side of equation. Equations should be referred in the text as Equation (n), where n is the equation number. Please make sure that the equations are numbered correctly without any repetition. Mathematical operation signs indicating continuity of the expression should be placed at the left hand of the second and succeeding lines. Use × for scalar products of vectors and "exp" for complicated exponents. FREE COLOR PRINTING: Color illustrations are most welcome by the journal as they are effective in conveying complex graphs and photographs. Free color printing at the Editor-in-Chief's discretion, will provide an opportunity to publish color figures/illustrations in print at NO COST to the authors. PHOTOGRAPHS: Half-tone illustrations should be supplied as clear, glossy, unmounted prints. The author's name, title of manuscript and figure number should be written on the back. TABLES: Each table must be referred to in the text. Each table should be typed double-spaced on a separate sheet and identified sequentially by Arabic numerals corresponding to the order in which they appear in the text. Each table should have a brief explanatory title, which should be labeled unambiguously. The position of each table should be clearly marked in the text. UNITS: Internationally accepted units of measurement must be used. The units of measurement are used in conjunction with their numerical values; the units should be abbreviated as suggested below. If more commonly used units are adopted, conversion factors should be given at their first occurrence. Greek symbols may be used. %, ºC, nm, µm (not m), mm, cm, cm3, m, h (or hr), min, s (or sec), µg, mg, g (or gm), kg, cal, kcal, in. (or write out inch), ml [write out liter(s)]. The APS style guide can be used as a general reference on matter of units, grammar and formatting. ABBREVIATIONS: No abbreviations are allowed in the title and abstract and should be defined the first time they are used within the text. The "Journal of Low Power Electronics" should be abbreviated as J. Low Power Electronics. for the citation purpose. REFERENCES: References should be in the proper format on a separate page, numbered in the sequence in which they occur in the text. Cite the references in the text as Arabic numbers in one consecutive series by the order of appearance in the text, with the text citations presented as unparenthesized superscripts. Include the title of the article in the cited reference. References should be listed in the following style. Do not use abstracts as references. References to papers accepted but not yet published should be designated as "in press". Information from manuscripts submitted but not accepted should be cited in the text as "unpublished observations" with written permission from the source. Avoid citing a "personal communication" unless it provides essential information not available from a public source. For scientific articles, authors should obtain written permission and confirmation of accuracy from the source of a personal communication. The references must be verified by the authors against the original documents.Articles in Journals 1. Journal article Ge. G. Samsonidze, R. Saito, A. Jorio, M. A. Pimenta, A. G. Souza Filho, A. Grüneis, G. Dresselhaus, and M. S. Dresselhaus. The Concept of Cutting Lines in Carbon Nanotube Science. J. Nanosci. Nanotech. vol. 3, 431 (2003) 2. Book H. S. Nalwa, Editor, Magnetic Nanostructures, American Scientific Publishers, Los Angeles (2003) 3. Chapter in a Book X. Duan, Y. Huang, Y. Cui, and C. M. Lieber, in Molecular Nanoelectronics, M. A. Reed and T. Lee, Editors, American Scientific Publishers, Los Angeles (2003), Chapter 8, pp.199-227. 4. Conference Proceedings J. Kimura and H. Shibasaki, Editors. Recent Advances in Clinical Neurophysiology. Proceedings of the 10th International Congress of EMG and Clinical Neurophysiology, (1995) October 15-19; Kyoto, Japan 5. Patent C. E. Larsen, R. Trip, and C.R. Johnson, Methods for procedures related to the electrophysiology of the heart. U.S. Patent 5,529,067, Jun 25 (1995). Do not use the phrases "et al." and "ibid." in the reference section. Instead, the names of all authors in a reference must be listed. ACKNOWLEDGEMENTS: These should be brief and placed at the end of the text before the references. PROOFS: Page proofs for the correction of printer's errors only will be dispatched to the corresponding author denoted with an asterik (*) unless otherwise requested. Alterations at this stage are not allowed as they are expensive and may have to be charged to the authors. The proofread copy and reprint order form must be returned within 72 hours. OFFPRINTS: Authors may order offprints of articles with a minimum of 100 from American Scientific Publishers (ASP) prior to publication. An order form accompanying the page proofs will be sent directly to the corresponding author (*). Please return your offprint order form with the page proofs. ELECTRONIC SUBMISSION: Upon acceptance of the manuscript for publication, authors should submit to the publisher a diskette or CD containing the final version (MS Word) of the manuscript accompanied by a hard copy printout to improve the accuracy and speed up the typesetting process. The disk or CD should be clearly labeled with the author's name, manuscript title, the date, and the hardware and software package used in preparation. The preferred medium is 3.5-inch diskette or a CD in Windows/MS-DOS or Macintosh having TeX. We are also able to accept line artwork/graphics on disk or CD if you supply us the source files to enables us to modify the artwork as required for the journal format. REFEREEING: To speed up the reviewing process, editors will communicate with authors and the referees via email. ASP or Editors will not return manuscripts to authors and keep any records whatsoever after a formal decision has been made about the manuscript. Editors have the right to reject the manuscript. COPYRIGHT: All authors are responsible for the complete contents of their manuscript. The author(s) warrant that the work contains no unlawful or libelous statements and opinions and liable materials of any kind whatsoever, do not infringe on any copyrights, intellectual property rights, personal rights or rights of any kind of others, and contain any materials, instructions, procedures, information or ideas that might cause any harm, damage, injury, losses or costs of any kind to person or property. It is authors' responsibility to obtain written copyright permissions from other sources for reproduction of any figures, tables, photos, illustrations, text or other copyright materials from previously published work. It is the policy of American Scientific Publishers to own the copyright of all contributions it publishes. To comply with the U.S. Copyright Law, a Copyright Transfer Form that transfer copyright of the article to the publisher must be completed by the authors prior to publication of an accepted article in this journal. Authors must submit a signed copy of this form with their manuscript. Editorial Board EDITOR-IN-CHIEF Professor Alexander A. Balandin Department of Electrical Engineering University of California Riverside, California 92521-0425, USA Tel.: (951) 827-2351 Fax: (951) 827-2425 Email: alexb@ee.ucr.edu                    ADVISORY BOARD MEMBERS Prof. Edwin C. Kan, Cornell University, USA Prof. Konstantin K. Likharev, Stony Brook University, USA Prof. Michael Shur, Rensselaer Polytechnic Institute, USA Prof. Michael Stroscio, University of Illinois at Chicago, USA Prof. Kang L. Wang, University of California at Los Angeles, USA Prof. Eli Yablonovitch, University of California at Los Angeles, USA                    INTERNATIONAL EDITORIAL BOARD MEMBERS Andrey Akimov, A. F.Ioffe Physico-Technical Institute, Russia Marc Cahay, University of Cincinnati, USA Zeynep Celik-Butler, University of Texas at Arlington, USA Tianhong Cui, University of Minnesota, USA Jamal Deen, McMaster University, Canada Jozef T. Devreese, Universiteit Antwerpen, Belgium Andrei G. Fedorov, Georgia Institute of Technology, USA Andrea C. Ferrari, University of Cambridge, UK Ying Fu, Royal Institute of Technology, Sweden Erez Hasman, Technion - Israel Institute of Technology, Israel Zheng Hu, Nanjing University, China Sergei Kalinin, Oak Ridge National Laboratory, USA Nikolay Kalugin, New Mexico Tech, USA Sakhrat Khizroev, University of California at Riverside, USA Roger Lake, University of California at Riverside, USA Liberato Manna, National Nanotechnology Laboratory at Lecce, Italy Vladimir Mitin, University at Buffalo, USA Daniel Murray, University of British Columbia Okanagan, Canada Thomas Nann, Freiburg Materials Research Center, Germany Arokia Nathan, University of Waterloo, Canada Elena Obraztsova, A.M. Prokhorov General Physics Institute, Russia E. P. Pokatilov, State University of Moldova, Moldova A. K. Raychaudhuri, S.N. Bose National Centre for Basic Sciences, India Ikuo Suemune, Hokkaido University, Japan Toshiaki Suhara, Osaka University, Japan Sebastian Volz, Ecole Centrale - Paris, France Xiang Zhang, University of California at Berkeley, USA Victor Zhirnov, Semiconductor Research Corporation, USA