期刊名称：JOURNAL OF CRYSTAL GROWTH
 期刊简介(About the journal)
投稿须知(Instructions to Authors)
编辑部信息(Editorial Board)
About the journal
|
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth
|
 |
Instructions to Authors
Submission of papers
Manuscripts can be submitted online using the "Submit online to this journal" facility at the following website: http://authors.elsevier.com/journal/jcrysgro . Alternatively, manuscripts (one original + two copies) should be sent to a member of the Editorial Board or preferably to an appropriate subject Associate Editor. For addresses, see preliminary pages of each issue or the "Editorial Board" information given at: http://authors.elsevier.com/journal/jcrysgro . You may suggest 4 to 6 names of preferred referees. However, we cannot guarantee that any referees suggested will be used. News or announcements should be submitted through the Principal Editor.
Types of contributions
Original research work
As a guideline: experimental papers should not be longer than 16 double-spaced typed pages, and 8 figures + tables; for theoretical papers a maximum of 20 pages and 10 figures + tables is suggested.
Priority communications
For reporting important new results only (must be accompanied by a statement regarding the "prime novelty"). Priority communications should not be longer than 5 double-spaced typed pages, and 3 figures + tables. Priority communications should be submitted to editor L.F. Schneemeyer.
Letters to the editor
For matters of urgency only (including comments on papers published in this journal). Letters to the editor should not be longer than 5 double-spaced typed pages.
All manuscripts should be concisely written, stressing the motivation for, and the novel aspects of, the work. Contributions should contain an Abstract (of up to 200 words) and a Conclusions section, which particularly in the case of theoretical papers translates the results into terms readily accessible to most readers. Priority communications and Letters to the Editors will be given priority in both the refereeing and production processes.
Original material:
Contributions are accepted on the understanding that the authors have obtained the necessary authority for publication. Submission of an article must be accompanied by a statement that the article is original and unpublished and is not being considered for publication elsewhere.
Preparation of manuscript: All manuscripts should be written in good English. For hardcopy submissions: both hard copy (for refereeing) and electronic (for printing) versions of the manuscript are required. More information on the electronic text can be found in the section entitled "Electronic text of manuscripts" below. The paper copies of the text should be prepared with double line spacing and wide margins, on numbered sheets.
Structure. Please adhere to the following order of presentation: Title, Author(s), Affiliation(s), Abstract, Keywords, Main text, Acknowledgements, Appendices, References, Figure captions, Tables. For regular articles a maximum of four levels of sections and subsections is allowed, for Letters none or at most one level of headings may be given.
Corresponding author. The name, complete postal address, telephone and fax numbers and the e-mail address of the corresponding author should be given on the first page of the manuscript. If possible, also provide details on other authors, especially if the corresponding author is planning to be away for a period when the manuscript is under review or in production at the Publisher.
Keywords/ PACS codes. Please supply one or more PACS-1998 codes and up to six keywords from the keyword list and put them below the abstract. Each keyword should be accompanied by the capital letter denoting the category from which the keyword has been selected, e.g. Keywords: A1. Biocrystallization, A3. Topotaxy, B1. Nanomaterials. If the keywords from the list are not relevant, authors may choose their own keywords, but each of these should also be accompanied by the capital letter denoting the category into which it falls. Both PACS codes and keyword list are available under Contents Services on the following website: http://www.elsevier.com/locate/jcrysgro
References. References should only be given to published material; references are not allowed to be footnotes and references to not readily accessible reports should be avoided. References to other work should be consecutively numbered in the text using square brackets, for example: "... and Chang and Weaver [1] show ..." and listed by number in the Reference list at the end of the text, for example: W.A. Harrison, Phys. Rev. 123 (1961) 85. (for a journal reference)
M.A. Lambert, A. Rose, R.W. Smith, Advances in Semiconductor Science, Pergamon, London, 1959, p. 49. (for a book reference)
Note: In the case of multiple authorship all authors should be listed in the references provided they number less than ten. Only in the case of more than 10 authors is "first author et al." acceptable.
Illustrations:
Illustrations should also be submitted in triplicate: one master set and two sets of copies. The line drawings in the master set should be original laser printer or plotter output or drawn in black india ink, with careful lettering, large enough relative to the size of the figure, to remain legible after reduction for printing. Photographs should be originals, with somewhat more contrast than is required in the printed version. They should be unmounted unless part of a composite figure. Any scale markers should be inserted on the photograph itself, not drawn below it.
Colour illustrations.Submit colour illustrations as original photographs, high-quality computer prints or transparencies, close to the size expected in publication, or as 35 mm slides. Polaroid colour prints are not suitable. If, together with your accepted article, you submit usable colour figures then Elsevier will ensure, at no additional charge, that these figures will appear in colour on the web (e.g., ScienceDirect and other sites) regardless of whether or not these illustrations are reproduced in colour in the printed version. For colour reproduction in print, you will receive information regarding the costs from Elsevier after receipt of your accepted article. For further information on the preparation of electronic artwork, please see http://autors.elsevier.com/artwork.
Please note: Because of technical complications which can arise by converting colour figures to  grey scale (for the printed version should you not opt for colour in print) please submit in addition usable black and white prints corresponding to all the colour illustrations.
Electronic text of manuscripts:
The publisher requires an electronic version of your accepted manuscript. If there is not already a copy of this (on diskette) with the journal editor at the time the manuscript is being refereed, you will be asked to send a file with the text of the revised manuscript. All major text processing packages can be handled. As to formats, both MS-DOS and Macintosh formatted disks can be handled. Please note that no deviations from the version accepted by the editor of the journal are permissible without the prior and explicit approval by the editor. Such changes should be clearly indicated on an accompanying printout of the file. In case discrepancies between hardcopy and electronic text are found by the publisher, the hardcopy version of the manuscript will be followed in all cases.
Electronic graphics for manuscripts:
The publisher welcomes electronic graphics accompanying accepted manuscripts. For online submissions, electronic graphics are mandatory (see online instructions at: http://authors.elsevier.com/journal/jcrysgro ("submit online to this journal"). Besides the need to always submit a high quality original hardcopy of every figure included with the manuscript, authors should send also send electronic versions, (in TIFF or EPS formats) on a separate disk. Especially for halftones (micrographs (AFM, STM, TEM, SEM etc.) and images) better results can be achieved when reproducing from electronic files. Authors may use any of the following media: floppy, CD-ROM or Zip-disk. For a full version of instructions for submitting electronic graphics contact our web-site:
http://authors.elsevier.com/journal/jcrysgro (see "Artwork Instructions").
Main points of attention:
Format/resolutions: The following formats/resolutions should be adhered to in all cases: for hardcopy, possibly from scanned original data, as well as for electronic files:
Encapsulated Postscript (EPS): 72 dpi. Note: vector drawings always as EPS with 72 dpi.
TIFF: for line art, minimum 600 dpi up to 1000 dpi. JPEG: for halftones, minimum of 240 dpi up to 300 dpi.
Note: Fonts used should also be supplied on the disk.
After acceptance:
Notification. The corresponding author will be notified by the editor of the acceptance of the article and urged to supply an electronic version of the accepted text, if this is not already available (usually this request is made at revision stage). Also an electronic version of illustrations will be requested.
Copyright transfer. In the course of the production process you will be asked to transfer copyright of the article to the publisher. This transfer will ensure the widest possible dissemination of information.
Page proofs. Page proofs are made and sent out to authors, in order to check that no undetected errors have arisen in the typesetting (or file conversion) process. No changes in, or additions to, the edited manuscript will be accepted.
Author benefits:
No page charges. Publishing in Journal of Crystal Growth is free.
Free offprints. The corresponding author will receive 25 offprints free of charge. An offprint order form will be supplied by Elsevier for ordering any additional paid offprints.
Discount. Contributors to Elsevier Science Journals are entitled to a 30% discount on all Elsevier Science books.
Authors can also keep a track on the progress of their accepted article, and set up e-mail alerts informing them of changes to their manuscript's status, by using the "Track a Paper" feature of Elsevier's Author Gateway.
Further information: For queries relating to the general submission of manuscripts (including electronic text and graphics), please contact: Author Support Department
authorsupport@elsevier.ie
Further information can also be found on the journal website: http://www.elsevier.com/locate/jcrysgro
Editorial Board
Editorial Board
Principal Editor:
T.F. Kuech
| Dept. of Chemical and Biological Engineering, University of Wisconsin at Madison, 1415 Engineering Drive, Madison, WI 53706, USA, Fax: +2 608 262 3782, Tel: +1 608 263 2922, Email: kuech@engr.wisc.edu |
Editorial Board:
R.S. Feigelson
| Geballe Lab. for Advanced Materials, Stanford University, Stanford, CA 94305-4, USA, Fax: +1 650 723 3752/3044, Tel: +1 650 723 4007, Email: feigel@soe.stanford.edu |
R. Kern
| CRMC, Centre National de la Recherche Scientifique (CNRS), Campus Luminy, Case 913, F-13288 Marseille Cedex 9, France, Fax: +33 4 91 418916, Tel: +33 4 91 172837, Email: kern@cinam.univ-mrs.fr |
K. Nakajima
| Crystal Science for Silicon Solar Cell Laboratory, Graduate School of Energy Science, Kyoto University, Yoshida-Honmachi, Sakyo-ku, 606-8501 Kyoto, Japan, Fax: +81-75 753 917, Tel: +81 75 753 9107, Email: nakasisc@energy.kyoto-u.ac.jp |
M. Schieber
Grad. School of Applied Sci. & Tech., Hebrew University of Jerusalem, 91904 Jerusalem, Israel, Fax: +972 2 566 3878, Tel: +972 2 658 4364, Email: schieber@vms.huji.ac.il
(Founding Editor) |
G.B. Stringfellow
| Utah Engineering, College of Engineering, University of Utah, 72 S. Central Campus Dr., Salt Lake City, UT 84112, USA, Fax: +1 801 581 8692, Tel: +1 801 581 8387, Email: stringfellow@coe.utah.edu |
K.W. Benz
Freiburg Materials Research Centre, Albert-Ludwigs-Universität Freiburg, Stefan-Meier-Str. 21, 79104 Freiburg, Germany, Fax: +49 761 203 4709, Tel: +49 761 203 4772, Email: klaus-werner.benz@fmf.uni-freiburg.de
(Microgravity, Electronic Materials) |
R. Bhat
SP PR 02-3, Corning, Inc., Sullivan Park, Corning NY 14831, USA, Fax: +1 607 974 1650, Tel: +1 607 974 1035, Email: bhatr@corning.com
(Thin Film, Epitaxial Growth) |
A. Bhattacharya
Dept. of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, 400005 Mumbai, India, Tel: +91-22-2278-2517, Email: arnab@tifr.res.in
(Epitaxial Growth, Nanowires, particles and quantum dots, optoelectronic devices) |
R.M. Biefeld
Manager, Dept. 1126, MS 0601, Sandia National Laboratories, PO Box 5800, Albuquerque, NM 87185-0601, USA, Fax: +1 505 844 3211, Tel: +1 505 844 1556, Email: rmbiefe@sandia.gov
(Epitaxial Growth and Nonostructures) |
A. Burger
Department of Physics, Fisk University, 1000 17th Ave. N., Nashville, TN 37208-3051, USA, Fax: +1 615 329 8634, Email: aburger@fisk.edu
(Melt growth, Compound semiconductors for radiation detectors, Scintillator crystals) |
E. Calleja
Dept. of Electonic Engineering (ISOM), ETSI Telecommunication, Universidad Politécnica de Madrid (UPM), UPM, 28040 Madrid, Spain, Fax: +34 91 3367323, Tel: +34 91 3367315, Email: calleja@die.upm.es
(Molecular Beam Epitaxy of Compound Semiconductors, Materials for Devices) |
J. De Yoreo
Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, CA 94550, USA, Fax: +1 925 424 4820, Tel: +1 925 423 4240, Email: deyoreo1@llnl.gov
(Solution Growth) |
K. Deppert
Faculty of Engineering (LTH), Lund University, Box 118, S-221 00 Lund, Sweden, Fax: +46 46 222 36 37, Tel: +46 46 222 95 20, Email: knut.deppert@ftf.lth.se
(Nanocrystals, Nanowires, Epitaxy, III-V Semiconductors) |
J.J. Derby
Dept. of Chemical Engineering and Material Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, MN 55455, USA, Fax: +1 612 626 7246, Email: derby@umn.edu
(Computational Models) |
M. Fleck
Universität Wien, Dr. Bohr-Gasse 7, A-1030 Wien, Austria, Email: michel.fleck@unive.ac.at
(Solution growth, Organic and biological crystals) |
R. Fornari
Inst. fur Kristallzuchtung, Max-Born-Institut, Max-Born-Str. 2, 12489 Berlin, Germany, Fax: +49 30 6392 3003, Tel: +49 30 6392 3000, Email: fornari@ikz-berlin.de
(Substrates, Growth from the melt, MO Chemical Vapour deposit, Oxides, Nitrides, Phosphides, Semicond. III-V Materials, Piezoelectric Materials) |
V. Fratello
Integrated Photonics Inc., 132 Stryker Lane, Hillsborough NJ 08844, USA, Fax: +1 908 281 0191, Tel: +1 908 281 8000, Email: vjfratello@integratedphotonics.com
(Oxide crystals, Liquid Phase Epitaxy of oxides, Solution growth of oxides, Magnetic materials, Optical materials) |
H. Fujioka
Inst. of Industrial Science, University of Tokyo, Meguro, 153-8505 Tokyo, Japan, Fax: +81 3 5452 6343, Tel: +81 3 5452 6342, Email: hfujioka@iis.u-tokyo.ac.jp
(Semiconductors, nanostructures and epitaxial growth bulk crystal growth) |
Y. Furukawa
Inst. of Low Temperature Science, Hokkaido University, Kita-19, Nishi-8, 060-0819 Kita-ku, Sapporo, Japan, Fax: +81 11 706 5467, Tel: +81 11 706 5467, Email: frkw@lowtem.hokudai.ac.jp
(Crystallization kinetics and Pattern formation) |
M.S. Goorsky
Dept. of Materials Science & Engineering, University of California at Los Angeles (UCLA), 3121B Engineering V, Los Angeles, CA 90095-1595, USA, Fax: +1 310 206 7353, Email: goorsky@seas.ucla.edu
(XRD Characterization, Epitaxy for Devices) |
K. Jacob
Alfred-Randt-Str. 24, D-12559 Berlin, Email: kjacobs@online.de
(solvothermal growth, oxide crystals, epitaxy) |
R.B. James
Brookhaven National Laboratory, Upton Li Nyu 1197 E 25th St, New York, NY 10010-2545, USA, Fax: 1 613 344 5584, Tel: 1 613 344 8633, Email: rjames@bnl.gov
(II-VI Semiconductors, Radiation Sensors) |
B.A. Korgel
Dept. of Chemical Engineering, University of Texas at Austin, Austin, TX 78712, USA, Fax: +1 512 471 7060, Tel: +1 512 471 5633, Email: korgel@che.utexas.edu
(Nanocrystals and Nanowires) |
J.B. Mullin
EMC-Hoo Two, 22 Branksome Towers, Poole, BH13 6JT, UK, Fax: + 44 01202 759 835, Tel: + 44 01202 762 172, Email: Brian.Mullin@btinternet.com
(Semiconductors) |
D.P. Norton
Dept. of Mat. Science & Engineering., University of Florida, Rhines Hall 202, P.O. Box 116400, Gainesville, FL 3261, USA, Fax: +1 352 846 1182, Tel: +1 352 846 0525, Email: dnort@mse.ufl.edu
(Oxide Thin Films and Epitaxy) |
A. Ohtomo
| Dept. of Applied Chemistry, Graduate School of Engineering, Tokyo Institute of Technology, 2-12-1-S1-1 Ookayama, Meguro-ku, 152-8550 Tokyo, Japan, Tel: +81 3 5734 2145, Email: ohtomo.a.aa@m.titech.ac.jp |
A.G. Ostrogorsky
Dept. of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180-3590, USA, Email: ostroa@rpi.edu
(Bulk crystal growth) |
T. Paskova
Dept. Materials Sci & Eng, North Carolina State University, 234F Monteith Research Center, Raleigh, NC 27695, USA, Fax: +1 919 789 8881, Tel: +1 919 789 8880, Email: t_paskova@ncsu.edu
(growth of bulk nitrides, epitaxy of highly mismatched systems, defects in III-V semiconductors) |
M. Plapp
Lab. de Physique d/l Matière Condensée, CNRS UMR 7643, Ecole Polytechnique de France, 91128 Palaiseau, France, Fax: + 33 1 6933 4799, Tel: +33 1 6933 4777, Email: mathis.plapp@polytechnique.fr
(Solidification, Theory and modeling) |
K. Ploog
Paul-Drude-Inst. f Festkörperelektr., Hausvogteiplatz 5-7, 10117 Berlin, Germany, Fax: +49 30 2 037720, Tel: +49 30 2 037720, Email: ploog@pdi-berlin.de
(Molecular Beam Epitaxy) |
S.R. Qiu
Physical and Life Sciences Department, Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, CA 94551, USA, Fax: (925) 423-0792, Tel: (925) 422-1636, Email: qiu2@llnl.gov
(Solution growth and biomineralization) |
J.M. Redwing
Dept. of Materials Science and Engineering, Pennsylvania State University, Steidle Building, University Park, PA 16802-5006, USA, Tel: +1 814 865 8665, Email: redwing@matse.psu.edu
(Nanoscale Materials, Quantum Dots, Nanoparticles, Nanowires) |
M. Rettenmayr
Inst. für Materialwissenschaft, Friedrich-Schiller-Universität Jena, Löbdergraben 32, 07743 Jena, Germany, Fax: +49 3641 947792, Tel: +49 3641 947790, Email: M.Rettenmayr@uni-jena.de
(Soldification) |
M. Roth
Dept. of Genetics, Fac. of Math. & Natural Sciences, Hebrew University of Jerusalem, Givat Ram, 91904 Jerusalem, Israel, Fax: 972 566 3878, Tel: 972 658 6364, Email: mroth@vms.huji.ac.il
(Nonlinear optical and electro-optical materials) |
P. Rudolph
Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany, Fax: +49 30 6392 3003, Tel: +49 30 6392 3034, Email: rudolph@ikz-berlin.de
(Defects, Bulk growth, Special types of growth technolgies, Semiconductors, Thermodynamics and kinetics, Melt structure) |
D.W. Shaw
University of Texas, 503 Potomac Pl., Southlake, TX 76092, USA, Tel: +1 972 883 6839, Email: dshaw@utdallas.edu
(Semiconductors, Epitaxy, Devices) |
M. Skowronski
Dept. of Materials Science and Engineering, Carnegie Mellon University, Roberts Engineering Hall, 5000 Forbes Ave., Pittsburgh, PA 15213-3890, USA, Tel: 412 2682710, Email: mareks@cmu.edu
(Wide band gap semiconductors) |
M. Tischler
Ocis Technology LLC, 4427 E. Turquoise Ave., Phoenix, AZ 85028, USA, Tel: +1 602 317 6249, Email: tisch@ocistech.com
(Priority Communications) |
S. Uda
Inst. for Materials Research, Tohoku University, 2-1-1 Katahira, 980-8577 Aoba, Sendai, Japan, Fax: +81 22 215 2101, Tel: +81 22 215 2100, Email: uda@imr.tohoku.ac.jp
(Oxide crystal growth, Physical chemistry of melt, Growth mechanism) |
M. Uwaha
Dept. of Physics, Nagoya University, Furo-cho, Chikusa-ku, 464 Nagoya, Japan, Fax: +81 52 789 2928, Tel: +81 52 789 2874, Email: uwaha@nagoya-u.jp
(Growth Kinetics) |
S. Veesler
CINAM-UPR3118, Université de la Mediterranée (Aix-Marseille II), Campus de Luminy case 913, F-13288 Marseille, France, Fax: +33 04 91 41 89 16, Tel: +33 06 62 92 28 66, Email: veesler@cinam.univ-mrs.fr
(Solution growth: Industrial - biological macromolecules - pharmaceutical compounds) |
M. Weyers
Materials Technology Dept., Leibniz-Institute fuer Hoechstfrequenztechnik, Ferdinand-Braun-Institut, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany, Email: markus.weyers@fbh-berlin.de
(Semiconducting III-V materials, Metal-organic vapour phase epitaxy, Epitaxial growth, devices) |
|
