期刊名称：IEEE TRANSACTIONS ON ELECTRON DEVICES
 期刊简介(About the journal)
投稿须知(Instructions to Authors)
编辑部信息(Editorial Board)
About the journal
IEEE Transactions on Electron Devices was the number eighteen most-cited journal in electrical and electronics engineering in 2003, according to the annual Journal Citation Report (2003 edition) published by the Institute for Scientific Information. It comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
Instructions to Authors
Plagiarism, Multiple Submission and Prior Publication
Copyright
General Policies
Plagiarism, Multiple Submission and Prior Publication
Plagiarism Tutorial - A Powerpoint presentation that explains the problem of plagiarism, and how it is adjudicated within IEEE.
Plagiarism FAQ - Information about the various IEEE policies related to plagiarism.
8.2.4 Allegations of Misconduct - From the IEEE PSPB Operations Manual; procedures for responding to complaints of misconduct, including the guidelines for handling plagiarism cases
Flowchart for Investigating Possible Plagiarism - A graphical representation of the adjudication process for plagiarism complaints.
Identifying Plagiarism - A useful set of factors and scenarios to be considered when assessing whether plagiarism has occurred.
Guidelines for Handling Multiple Submission and Prior Publication - (from Section 8.2.4F of the PSPB Operations Manual)¡ªDescribes acceptable reuse of previously published material, author's obligations regarding multiple submission, prior publication and reuse of previously published work and appropriate corrective actions that correspond to the degree or type of misconduct.
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Copyright
IEEE Copyright Form - In PDF format, also available as a Microsoft Word document
Electronic Copyright Form FAQ - Information about the electronic IEEE Copyright Form
Copyright FAQ - A variety of information related to copyrights, trademarks, and fair use.
Policy on Electronic Dissemination - (from Section 8.1.9 of the PSPB Operations Manual)¡ªIncludes policies on the use of electronic preprints, author self-archiving on personal and classroom servers as well as on company or institutional repositories, online posting of collected works, and linking to IEEE web sites.
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General Policies
IEEE Identity Standards - Information on how the IEEE name, Master Brand and other organizational symbols are used in all official materials and communications from the IEEE, both print and electronic.
IEEE PSPB Operations Manual - Outlines the Publication policies of the IEEE as set by the PSPB and approved by the IEEE Board of Directors
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Editorial Board
Editor-in-Chief:
Douglas P. Verret
Texas Instruments, Inc.
Houston, TX, USA
Tel: +1 281 274 3369
Fax:+1 281 274 4203
E-Mail: d-verret@ti.com
Editor: Medhi Anwar
Compound Semiconductor Devices
University of Connecticut
Electrical & Computer Engineering Department
260 Glenbrook Road, U-2157
Storrs, CT 06269-2157 USA
Tel: +1-860-486-3979
Fax:+1-860-486-2447
E:Mail: anwara@engr.uconn.edu
Pallab K. Bhattacharya
Optoelectronic Devices
Dept. of EECS - Rm. 2306
University of Michigan
Ann Arbor, MI 48109-2122, USA
Tel: +1-734-763-6678
Fax:+1-734-763-9324
Email: pkb@eecs.umich.edu
Sec: 1-734-647-1759
Joachim N. Burghartz
Bipolar Devices
Delft University of Technology
DIMES-ECTM, Feldmanweg 17
P.O. Box 5053
NL-2600 GB Delft
The Netherlands
Tel: +31 15 278 3868/5558
Fax:+31 15 262 3271
E-mail: j.n.burghartz@dimes.tudelft.nl
Mi-Chang Chang
MOS Devices & Technology
TSMC
#131 Park Ave - 3rd
No. 9, Creation Rd. 1
Science-Based Industrial Park
Hsin-Chu, Taiwan 300, R.O.C.
Tel: +886 3 578 1688 ext. 8600
Fax +886 3 567 0282
E-Mail: michang@tsmc.com.tw
Asst: karen_chena@tsmc.com.tw
Supriyo Datta
Molecular Electronics/Quantum Devices
Purdue University
1285 Electrical Engineering
West Lafayette, IN 47907-1285
Tel: +1 765-494-3511
Fax:+1 765-494-6441
E-Mail: datta@ecn.purdue.edu
Jamal Deen
Solid State
Temporary Address Until July 2003
Universite Montpellier II
CNRS Directeur de Recherche
CEM2/cc084, Batiment 21, Bureau 310
Place E. Batallion
34095 Montpellier Cedex 5 France
Tel: +33 4 6714 3214
Fax:+33 4 6754 7134
Email: deen@cem2.univ-montp2.fr
Dan M. Goebel
Jet Propulsion Laboratory
Phone: +1 818 354 8284
Fax: +1 818 393 6682
Email: dan.m.goebel@jpl.nasa.gov
Guido Groeseneken
Reliability
IMEC
Kapeldreef 75
B-3001 Leuven Belgium
Tel: +32-16-281-269
Fax:+32-16-281-844
E-Mail: guido.groeseneken@imec.be
Jaroslav Hynecek
Image Sensors & Displays
ISETEX, Inc.
905 Pampa Drive
Allen, TX 75013 USA
Tel: +1-972-396-4925
Fax:+1-972-396-4978
E-Mail: hynecek@swbell.net
Shin'ichiro Kimura
MOS Devices Technology
Hitachi Ltd
Central Research Laboratory
1-280 Higashi-Koigakub
Kokubunji-shi, Tokyo 185-8601
Japan
Tel: 81 42 323 1111
Fax: 81 42 327 7773
E-Mail: sayo@crl.hitachi.co.jp
Chien-Ping Lee
Compound Semiconductor Devices
National Chiao Tung University
Department of Electronics Engineering
1001 Ta Hsueh Road
Hsinchu 30050, Taiwan
Tel: +886 3 571 2121
Fax: +886 3 572 4361
E-Mail: cplee@mail.nctu.edu.tw
Chih-Yuan Lu
MOS Devices & Technology
Ardentec Corporation
#24 4th Floor, Wen-Huah Road
Hsin-Chu Industrial Park, Hukuo
Hsin-Chu Hsien, Taiwan 303 R.O.C.
Tel: +886-3-5971000, x 1000
Fax:+886-3-5971399
E-Mail: cy.lu@ardentec.com.tw
Colin C. McAndrew
Device and Process Modeling
Motorola
MD EL701 2100 E. Elliot Road
Tempe, AZ 85284-1801
Tel: +1 480 413 3982
Fax:+1 480 413 4034
E-Mail:mcandrew@ieee.org
Khalil Najafi
Solid State Sensors and Actuators
1241 EECS Bldg.
University of Michigan
1301 Beal Ave.
Ann Arbor, MI 48109-6650 USA
Tel: +1-734-763-6650
Fax:+1-734-763-9324
E-Mail: najafi@engin.umich.edu
Sec: 1-734-763-2126
Paul N. Panayotatos
Solid State Energy Sources
Dept. of Electrical Engineering
Rutgers University
P.O. Box 909
Piscataway, NJ 08855 USA
Tel: +1-732-445-3382
Fax:+1-732-445-2820
E-Mail: panayot@ece.rutgers.edu
Sec: 1-732-445-3302
M. Ayman Shibib
Solid State Power
Agere Systems.
1110 American Parkway NE
Allentown, PA 18109 USA
Tel: +1-610-712-1581
Fax:+1-610-712-1580
E-Mail: a.shibib@ieee.org
Ritu Shrivastava
CMOS Devices & Technology
VP Technology Development
Alliance Semiconductor Company
2575 Augustine Drive
Santa Clara, CA 95054-3003, USA
Tel: +1-408-855-6747
Fax:+1-408-855-4999
E-Mail: ritu@alsc.com
Rajendra Singh
Nanoelectronics
Holcombe Dept. of Electrical & Computer Engineering
Clemson University
105 Riggs Hall
Box 340914
Clemson, SC 29634-0915 USA
Tel: +1-864-656-0919
Fax:+1-864-656-5910
E-Mail: raj.singh@ces.clemson.edu
Thomas Skotnicki
MOS Devices & Technology
ST Microelectronics
850, rue Jean Monnet
38 926 Crolles, France
Tel: +33 4 7692 6829
Fax:+33 4 7692 5071
E-Mail: thomas.skotnicki@st.com
Juzer M. Vasi
MOS Devices & Technology
Electrical Engineering Dept.
Indian Institute of Technology
Powai
Bombay, 400 076 India
Tel: +91-22-572-2545
Fax:+91-22-572-3707
E-Mail: vasi@ee.iitb.ac.in
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